On the Complexity of Wafer-to-Wafer Integration

نویسندگان

  • Guillerme Duvillié
  • Marin Bougeret
  • Vincent Boudet
  • Trivikram Dokka
  • Rodolphe Giroudeau
چکیده

In this paper we consider the Wafer-to-Wafer Integration problem. A wafer is a p-dimensional binary vector. The input of this problem is described by m disjoints sets (called "lots"), where each set contains n wafers. The output of the problem is a set of n disjoint stacks, where a stack is a set ofm wafers (one wafer from each lot). To each stack we associate a p-dimensional binary vector corresponding to the bit-wise AND operation of the wafers of the stack. The objective is to maximize the total number of "1" in the n stacks. We provide O(m1− ) and O(p1− ) non-approximability results even for n = 2, as well as a p r -approximation algorithm for any constant r. Finally, we show that the problem is FPT when parameterized by p, and we use this FPT algorithm to improve the running time of the p r -approximation algorithm.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

An Investigation on Two Types of Crystalline Micro-diamond Film Coated Tools Lapping with Sapphire Wafer

Two types of micron-diamond films were prepared on YG6 substrate by hot filament chemical vapor deposition(HFCVD) method. Morphology and orientation of crystalline growth were evaluated by SEM and XRD. Diamond film coated tools and sapphire wafer’ surface before and after lapping experiment  were contrasted. The results indicated that a significant change in Raman spectrum of two types of micro...

متن کامل

Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study

A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism. Quantum confinement increases the effective Schottky barrier height (SBH). (100) orientation provides lower effective Schottky barrier height in compa...

متن کامل

Nanowires fine tunable fabrication by varying the concentration ratios, the etchant and the plating spices in metal-assisted chemical etching of silicon wafer.

The metal-assisted chemical etching (MACE) was used to synthesis silicon nanowires. The effect of etchant concentration, etching and chemical plating time and doping density on silicon nanowires length were investigated. It is held that the increasing of HF and H2O2 concentrations lead to etching rate increment and formation of wire-like structure. The results show that, the appropriate ratio o...

متن کامل

Design and Fabrication of a Quartz Crystal Resonator Used in a Thickness-Monitor Unit (TECHNICAL NOTES).

This paper deals with the design and fabrication of a quartz-crystal resonator used in a thickness-monitor unit, measuring film thickness in a film-depositing system. A purpose-grown quartz crystal is cut to form the desired wafer. Two gold electrodes are deposited on both surfaces of the wafer to provide electrical contacts. The resonance frequency of the resonator, at room temperature, and th...

متن کامل

VERY DEEP TRENCHES IN SILICON WAFER USING DRIE METHOD WITH ALUMINUM MASK

Abstract: In this paper, a DRIE process for fabricating MEMS silicon trenches with a depth of more than 250 m is described. The DRIE was produced in oxygen-added sulfur hexafluoride (SF6) plasma, with sample cooling to cryogenic temperature using a Plasmalab System 100 ICP 180 at different RF powers. A series of experiments were performed to determine the etch rate and selectivity of the some m...

متن کامل

Approximation Algorithms for Wafer to Wafer Integration Problem

Motivated by the yield optimization problem in semi-conductor manufacturing, we model the wafer to wafer integration problem as a multi-dimensional assignment problem and study it from an approximation point of view. We give approximation algorithms achieving an approximation factor of 3 2 and 4 3 for WWI-3. We show that a special case of yield optimization problem can be solved in polynomial t...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2015